nov. 20 15 revision 0.0 magnachip semiconductor ltd . 1 m bq60t65pes high speed fieldstop trench igbt second g eneration e c g maximum rating parameter symbol rating unit collector - e mitter v oltage v ce 65 0 v dc collector current, limited by t vj max t c =25 c i c 10 0 a t c =100 c 6 0 a pulsed c ollector cu rren t, t p l imited by t vj max i c p 180 a turn off safe operating area v ce 65 0v , t vj 175 c - 180 a diode f orward c urrent limited by t vj max t c =25 c i f 60 a t c =100 c 30 diode pulsed c urrent , t p limited by t vj max i f p 200 a gate - e mitter v oltage v g e 2 0 v p ower d issipation t c =25 c p d 428 w t c =100 c 214 w short c ircuit w ithstand t ime v c c 4 00v, r g = 7 , v ge = 15v, t vj = 1 50 c tsc 5 s operating junction t emperature r ange t vj - 40 ~1 75 c storage temperature range t stg - 55~150 c soldering temperature w ave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermal characteristic parameter symbol rating unit thermal r esistance j unction - to - a mbient r ja 4 0 c /w thermal r esistance j unction - to - c ase for igbt r jc 0. 35 thermal r esistance j unction - to - c ase for diode r jc 1.2 MBQ60T65PES high s peed fieldstop trench igbt second g eneration features ? high speed switching & low power loss ? v ce(sat) = 1.8 5v @ i c = 60a ? e off = 0.53 mj @ t c = 25 c ? high input impedance ? t rr = 11 0ns (typ.) @ di f /dt = 5 00a/ s ? maximum junction t emperature 175 c applications ? pfc ? ups ? pv inverter general description th is igbt is produced using advanced m agnachips field stop trench igbt 2 nd generation technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, ups, ih, w elder and pfc application where low conduction losses are essential to - 2 47 ? welder ? ih cooker
nov. 20 15 revision 0.0 magnachip semiconductor ltd . 2 m bq60t65pes high speed fieldstop trench igbt second g eneration ordering information p art number marking temp. range package packing rohs status m bq6 0t 65 p e s th 6 0t65 p e s - 55~1 75 c to - 247 tube halogen free electrical characteristic ( t vj = 25c unless otherwise specified ) parameter symbol condition s min typ max unit static characteristic collector - e mitter b reakdown v oltage bv ces i c = 2 m a, v g e = 0v 65 0 - - v collector - e mitter s aturation v oltage v ce(sat) i c = 6 0 a, v g e = 15v t vj = 25 c - 1. 85 2. 4 v t vj = 175 c - 2. 6 - diode forward voltage v f v g e = 0v, i f = 25 a t vj = 25 c - 1.4 5 2. 0 v t vj = 175 c - 1.3 5 - gate - emitter thre shold v oltage v g e (th) v ce = v g e , i c = 0.5m a 4 . 0 5.0 6. 0 v zero gate voltage collector current i ces v ce = 650v , v g e = 0v , t vj = 25c - - 40 a gate - emitter l eakage c urrent i g e s v ge = 20v , v ce = 0v - - 100 na dynamic characteristic total g ate c harge q g v ce = 52 0v, i c = 6 0 a, v ge = 1 5 v - 95 - nc gate - emitter c harge q ge - 19 - gate - collector c harge q g c - 47 - input c apacitance c i e s v ce = 25 v, v ge = 0v, f = 1 mhz - 2327 - pf reverse t ransfer c apacitance c r e s - 55 - output c apacitance c o e s - 2 70 - internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switching characteristic turn - o n d elay t ime t d(on) v g e = 15v, v cc = 400v, i c = 6 0a, r g = 7 , inductive load, t vj = 25 c - 42 - n s rise t ime t r - 54 - turn - o ff d elay t ime t d(off) - 142 - fall t ime t f - 40 - turn - on switching energy e on - 0. 92 - mj turn - off switching energy e off - 0. 5 3 - total switching energy e ts - 1. 45 - turn - o n d elay t ime t d(on) v g e = 15v, v cc = 400v, i c = 6 0a, r g = 7 , inductive load, t vj = 175 c - 45 - n s rise t ime t r - 58 - turn - o ff d elay t ime t d(off) - 152 - fall t ime t f - 35 - turn - on switching energy e on - 1. 43 - mj turn - off switching energy e off - 0. 5 3 - total switching energy e ts - 1. 96 - reverse recovery time t rr i f = 25 a, di f /dt = 5 00a/ s, t vj = 25 c - 110 - n s reverse recovery current i rr - 18 - a reverse recovery charge q rr - 1.10 - c reverse recovery time t rr i f = 2 5 a, di f /dt = 5 00a/ s, t vj = 175 c - 205 - n s reverse recovery current i rr - 25 - a reverse recovery charge q rr - 2.67 - c
nov. 20 15 revision 0.0 magnachip semiconductor ltd . 3 m bq60t65pes high speed fieldstop trench igbt second g eneration
nov. 20 15 revision 0.0 magnachip semiconductor ltd . 4 m bq60t65pes high speed fieldstop trench igbt second g eneration
nov. 20 15 revision 0.0 magnachip semiconductor ltd . 5 m bq60t65pes high speed fieldstop trench igbt second g eneration
nov. 20 15 revision 0.0 magnachip semiconductor ltd . 6 m bq60t65pes high speed fieldstop trench igbt second g eneration
nov. 20 15 revision 0.0 magnachip semiconductor ltd . 7 m bq60t65pes high speed fieldstop trench igbt second g eneration physical dimension to - 247 d imensions are in millimeters, unless otherwise specified dimension min(mm) max(mm) a 4.70 5.31 a1 2.20 2.60 a2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 d 20.30 21.46 d1 13.08 - e 15.45 16.26 e1 13.06 14.02 e2 4.32 5.49 e 5.45bsc l 19.81 20.57 l1 - 4.50 p 3.50 3.70 q 5.38 6.20 s 6.15bsc e d q l l1 e b b2 b1 a a1 c d1 e1 p s a2 e2
nov. 20 15 revision 0.0 magnachip semiconductor ltd . 8 m bq60t65pes high speed fieldstop trench igbt second g eneration disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider respons ibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered tradema rk of magnachip semiconductor ltd.
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